TY - JOUR
T1 - High-Mobility Regioisomeric Thieno[f,f′]bis[1]benzothiophenes
T2 - Remarkable Effect of Syn/Anti Thiophene Configuration on Optoelectronic Properties, Self-Organization, and Charge-Transport Functions in Organic Transistors
AU - Oyama, Tatsuya
AU - Mori, Tatsuya
AU - Hashimoto, Tomohiro
AU - Kamiya, Muneaki
AU - Ichikawa, Takahiro
AU - Komiyama, Hideaki
AU - Yang, Yu Seok
AU - Yasuda, Takuma
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research (No. JP15H01049) from the MEXT, Japan and the Canon Foundation. The synchrotron experiments were performed at the BL45XU and BL40B2 beamlines of the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No. 2015B1305 and 2016A1081). The authors are grateful for the support of the Cooperative Research Program “Network Joint Research Center for Materials and Devices.”
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/1
Y1 - 2018/1
N2 - π-Conjugated thienoacene-based organic semiconductors with high charge carrier mobility and processability have been intensively pursued for electronic device applications, including organic field-effect transistors (OFETs). Their charge carrier mobility is an important figure of merit, and is influenced not only by the intrinsic electronic structure at molecular level, but also by the molecular packing arrangement and crystallinity in the solid state. In this work, the focus is on a unique regioisomeric thienoacene system involving dialkyl-thieno[f,f′]bis[1]benzothiophene isomers having different syn/anti thiophene configurations (syn- and anti-TBBT-8). The effects of these regioisomeric structures on the physicochemical properties, self-organization behavior, and charge-transport functions are systematically investigated using experimental and theoretical analyses. The structural analyses indicate that the syn- and anti-TBBT-8 isomers self-organize into completely different packing arrangements, in the form of solution-crystallized microribbons and thin films. The resulting charge-transport properties are strongly dependent on the syn/anti thiophene configurations. Remarkably, solution-processed OFETs using the syn-TBBT-8 isomer show high hole mobilities of up to 10.1 cm2 V−1 s−1, which are more than one order of magnitude higher than those of the anti-TBBT-8 isomer. This work highlights the importance of the regioisomeric molecular configuration of thienoacene-based organic semiconductors for developing high-performance electronic devices.
AB - π-Conjugated thienoacene-based organic semiconductors with high charge carrier mobility and processability have been intensively pursued for electronic device applications, including organic field-effect transistors (OFETs). Their charge carrier mobility is an important figure of merit, and is influenced not only by the intrinsic electronic structure at molecular level, but also by the molecular packing arrangement and crystallinity in the solid state. In this work, the focus is on a unique regioisomeric thienoacene system involving dialkyl-thieno[f,f′]bis[1]benzothiophene isomers having different syn/anti thiophene configurations (syn- and anti-TBBT-8). The effects of these regioisomeric structures on the physicochemical properties, self-organization behavior, and charge-transport functions are systematically investigated using experimental and theoretical analyses. The structural analyses indicate that the syn- and anti-TBBT-8 isomers self-organize into completely different packing arrangements, in the form of solution-crystallized microribbons and thin films. The resulting charge-transport properties are strongly dependent on the syn/anti thiophene configurations. Remarkably, solution-processed OFETs using the syn-TBBT-8 isomer show high hole mobilities of up to 10.1 cm2 V−1 s−1, which are more than one order of magnitude higher than those of the anti-TBBT-8 isomer. This work highlights the importance of the regioisomeric molecular configuration of thienoacene-based organic semiconductors for developing high-performance electronic devices.
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U2 - 10.1002/aelm.201700390
DO - 10.1002/aelm.201700390
M3 - Article
AN - SCOPUS:85037338307
SN - 2199-160X
VL - 4
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 1
M1 - 1700390
ER -