High mobility sputtered InSb film by blue laser diode annealing

C. J. Koswaththage, T. Higashizako, T. Okada, Taizoh Sadoh, M. Furuta, B. S. Bae, T. Noguchi

Research output: Contribution to journalArticle

Abstract

InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

Original languageEnglish
Article number045009
JournalAIP Advances
Volume9
Issue number4
DOIs
Publication statusPublished - Apr 1 2019

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semiconductor lasers
annealing
glass
melting points
radiant flux density
plastics
sputtering
laser beams
scanning
sensors
thin films
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S., & Noguchi, T. (2019). High mobility sputtered InSb film by blue laser diode annealing. AIP Advances, 9(4), [045009]. https://doi.org/10.1063/1.5087235

High mobility sputtered InSb film by blue laser diode annealing. / Koswaththage, C. J.; Higashizako, T.; Okada, T.; Sadoh, Taizoh; Furuta, M.; Bae, B. S.; Noguchi, T.

In: AIP Advances, Vol. 9, No. 4, 045009, 01.04.2019.

Research output: Contribution to journalArticle

Koswaththage, CJ, Higashizako, T, Okada, T, Sadoh, T, Furuta, M, Bae, BS & Noguchi, T 2019, 'High mobility sputtered InSb film by blue laser diode annealing', AIP Advances, vol. 9, no. 4, 045009. https://doi.org/10.1063/1.5087235
Koswaththage CJ, Higashizako T, Okada T, Sadoh T, Furuta M, Bae BS et al. High mobility sputtered InSb film by blue laser diode annealing. AIP Advances. 2019 Apr 1;9(4). 045009. https://doi.org/10.1063/1.5087235
Koswaththage, C. J. ; Higashizako, T. ; Okada, T. ; Sadoh, Taizoh ; Furuta, M. ; Bae, B. S. ; Noguchi, T. / High mobility sputtered InSb film by blue laser diode annealing. In: AIP Advances. 2019 ; Vol. 9, No. 4.
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