TY - JOUR
T1 - High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
AU - Aji, Adha Sukma
AU - Solís-Fernández, Pablo
AU - Ji, Hyun Goo
AU - Fukuda, Kenjiro
AU - Ago, Hiroki
N1 - Funding Information:
This work was supported by JSPS KAKENHI grant numbers JP15H03530, JP16H0091, and JP17K19036, and PRESTO-JST (JPMJPR1322-13417571). ASA acknowledges the support from the MEXT scholarship.
Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2017/12/15
Y1 - 2017/12/15
N2 - The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm2 V−1 s−1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm2 V−1 s−1) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 µm) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W−1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
AB - The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm2 V−1 s−1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm2 V−1 s−1) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 µm) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W−1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
UR - http://www.scopus.com/inward/record.url?scp=85032175266&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85032175266&partnerID=8YFLogxK
U2 - 10.1002/adfm.201703448
DO - 10.1002/adfm.201703448
M3 - Article
AN - SCOPUS:85032175266
VL - 27
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 47
M1 - 1703448
ER -