Abstract
The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm2 V−1 s−1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm2 V−1 s−1) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 µm) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W−1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
| Original language | English |
|---|---|
| Article number | 1703448 |
| Journal | Advanced Functional Materials |
| Volume | 27 |
| Issue number | 47 |
| DOIs | |
| Publication status | Published - Dec 15 2017 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
Cite this
High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors. / Aji, Adha Sukma; Solís-Fernández, Pablo; Ji, Hyun Goo; Fukuda, Kenjiro; Ago, Hiroki.
In: Advanced Functional Materials, Vol. 27, No. 47, 1703448, 15.12.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
AU - Aji, Adha Sukma
AU - Solís-Fernández, Pablo
AU - Ji, Hyun Goo
AU - Fukuda, Kenjiro
AU - Ago, Hiroki
PY - 2017/12/15
Y1 - 2017/12/15
N2 - The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm2 V−1 s−1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm2 V−1 s−1) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 µm) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W−1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
AB - The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm2 V−1 s−1 at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm2 V−1 s−1) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 µm) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W−1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
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U2 - 10.1002/adfm.201703448
DO - 10.1002/adfm.201703448
M3 - Article
AN - SCOPUS:85032175266
VL - 27
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 47
M1 - 1703448
ER -