High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

Y. Muramoto; K. Kato; M. Mitsuhara; O. Nakajima; Y. Matsuoka; N. Shimizu; T. Ishibashi

doi:10.1049/el:19980054

High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

Y. Muramoto, K. Kato, M. Mitsuhara, O. Nakajima, Y. Matsuoka, N. Shimizu, T. Ishibashi

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

A uni-travelling-carrier structure is applied to the high speed, high efficiency waveguide pin photodiode with the aim of increasing the maximum available output voltage. With a 50Ω load, a photodiode having an external quantum efficiency of 32% yields an output voltage of 1.3V with a bandwidth of 55GHz, and 0.45V with a bandwidth of 70GHz.

Original language	English
Pages (from-to)	122-123
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980054
Publication status	Published - Jan 8 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19980054

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@article{dd23ec4917bc4c50a347640177d2cbe0,

title = "High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode",

abstract = "A uni-travelling-carrier structure is applied to the high speed, high efficiency waveguide pin photodiode with the aim of increasing the maximum available output voltage. With a 50Ω load, a photodiode having an external quantum efficiency of 32% yields an output voltage of 1.3V with a bandwidth of 55GHz, and 0.45V with a bandwidth of 70GHz.",

author = "Y. Muramoto and K. Kato and M. Mitsuhara and O. Nakajima and Y. Matsuoka and N. Shimizu and T. Ishibashi",

year = "1998",

month = jan,

day = "8",

doi = "10.1049/el:19980054",

language = "English",

volume = "34",

pages = "122--123",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "1",

}

TY - JOUR

T1 - High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

AU - Muramoto, Y.

AU - Kato, K.

AU - Mitsuhara, M.

AU - Nakajima, O.

AU - Matsuoka, Y.

AU - Shimizu, N.

AU - Ishibashi, T.

PY - 1998/1/8

Y1 - 1998/1/8

N2 - A uni-travelling-carrier structure is applied to the high speed, high efficiency waveguide pin photodiode with the aim of increasing the maximum available output voltage. With a 50Ω load, a photodiode having an external quantum efficiency of 32% yields an output voltage of 1.3V with a bandwidth of 55GHz, and 0.45V with a bandwidth of 70GHz.

AB - A uni-travelling-carrier structure is applied to the high speed, high efficiency waveguide pin photodiode with the aim of increasing the maximum available output voltage. With a 50Ω load, a photodiode having an external quantum efficiency of 32% yields an output voltage of 1.3V with a bandwidth of 55GHz, and 0.45V with a bandwidth of 70GHz.

UR - http://www.scopus.com/inward/record.url?scp=0032495313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032495313&partnerID=8YFLogxK

U2 - 10.1049/el:19980054

DO - 10.1049/el:19980054

M3 - Article

AN - SCOPUS:0032495313

SN - 0013-5194

VL - 34

SP - 122

EP - 123

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

Abstract

All Science Journal Classification (ASJC) codes

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