High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures

Yu ki Taninouchi, Tetsuya Uda, Tetsu Ichitsubo, Yasuhiro Awakura, Eiichiro Matsubara

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Li- and Ag-doped Bi2VO5.5 were synthesized by solid-state reactions, and their high oxide-ion conductivities at intermediate temperatures between 400 and 600 °C were demonstrated. Li- and Ag-doped Bi2VO5.5 show a higher symmetry than Bi2VO5.5 at room temperature. In Bi2(V0.9Li0.1)O5.3 and Bi2(V0.9Ag0.1)O5.3, the tetragonal γ-phase, i.e., the high-temperature and disordered phase of Bi2VO5.5, is stabilized at room temperature. AC impedance spectroscopy reveals that Li- and Ag-doping markedly improve the electrical conductivity of Bi2VO5.5 below 570 °C. The dominant charge carrier is confirmed as oxide ions from impedance spectra, DC polarization measurements, and conductivity change with oxygen partial pressure. At around 500 °C, the oxide-ion conductivities of Li- and Ag-doped Bi2VO5.5 are 2-5 times higher than that of La0.8Sr0.2Ga0.8Mg0.115Co0.085O3, which is one of the best oxide-ion conductors.

Original languageEnglish
Pages (from-to)719-723
Number of pages5
JournalSolid State Ionics
Volume181
Issue number15-16
DOIs
Publication statusPublished - Jun 3 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'High oxide-ion conductivity of monovalent-metal-doped bismuth vanadate at intermediate temperatures'. Together they form a unique fingerprint.

Cite this