High performance all-solution processed InZnO thin-film transistors via photo-functionalization at varying fluence and annealing environment

Dianne Corsino, Juan Paolo Bermundo, Mami N. Fujif, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Contribution to journalConference articlepeer-review

Abstract

This work presents an all-solution approach to oxide TFT fabrication through the photo-functionalization of InZnO using photo-assisted methods. We fabricated high-performance all-solution devices using UV and excimer laser treatment which are competitive with vacuum-processed TFTs. This work is a big step towards large-area manufacture of low-cost electronics.

Original languageEnglish
Pages (from-to)1350-1353
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume51
Issue number1
DOIs
Publication statusPublished - 2020
Event57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
Duration: Aug 3 2020Aug 7 2020

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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