We report the development of high performance all-solution processed oxide thin-film transistors (TFT) via selective photo-induced semiconductor-to-conductor transformation of a-InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll-to-roll fabrication.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Issue number||Book 1|
|Publication status||Published - Jan 1 2019|
|Event||SID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States|
Duration: May 12 2019 → May 17 2019
All Science Journal Classification (ASJC) codes