High performance all solution processed oxide thin-film transistor via photo-induced semiconductor-to-conductor transformation of a-InZnO

Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Dianne C. Corsino, Aimi Syairah, Mami N. Fujii, Hiroshi Ikenoue, Yasuaki Ishikawa, Yukiharu Uraoka

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

We report the development of high performance all-solution processed oxide thin-film transistors (TFT) via selective photo-induced semiconductor-to-conductor transformation of a-InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll-to-roll fabrication.

Original languageEnglish
Pages (from-to)422-425
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume50
Issue numberBook 1
DOIs
Publication statusPublished - Jan 1 2019
EventSID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, United States
Duration: May 12 2019May 17 2019

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'High performance all solution processed oxide thin-film transistor via photo-induced semiconductor-to-conductor transformation of a-InZnO'. Together they form a unique fingerprint.

Cite this