High performance ambipolar organic field-effect transistors based on indigo derivatives

Oratai Pitayatanakul, Toshiki Higashino, Tomofumi Kadoya, Masaki Tanaka, Hirotaka Kojima, Minoru Ashizawa, Tadashi Kawamoto, Hidetoshi Matsumoto, Ken Ishikawa, Takehiko Mori

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)


A bio-inspired organic semiconductor 5,5′-diphenylindigo shows excellent and well-balanced ambipolar transistor properties; its hole and electron mobilities are 0.56 and 0.95 cm2 V-1 s-1, respectively. The enhanced performance is attributed to the extended π-π overlap of the phenyl groups as well as the characteristic packing pattern that is a hybrid of the herringbone and brickwork structures. The ambipolar transistor characteristics are analyzed considering its operating regions, where a large unipolar saturated region appears due to the difference of the electron and hole threshold voltages.

Original languageEnglish
Pages (from-to)9311-9317
Number of pages7
JournalJournal of Materials Chemistry C
Issue number43
Publication statusPublished - Nov 21 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry


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