TY - JOUR
T1 - High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors
AU - Zheng, Dingshan
AU - Fang, Hehai
AU - Wang, Peng
AU - Luo, Wenjin
AU - Gong, Fan
AU - Ho, Johnny C.
AU - Chen, Xiaoshuang
AU - Lu, Wei
AU - Liao, Lei
AU - Wang, Jianlu
AU - Hu, Weida
N1 - Funding Information:
D.Z. and H.F. contributed equally to this work. W.H., J.W., and L.L. conceived and supervised the research. D.Z. did the nanowire growth. D.Z. and H.F. fabricated the devices. D.Z., H.F., and P.W. performed the measurements. H.F. carried out the FDTD simulations. W.H., L.L., J.W., and D.Z. wrote the paper. All authors discussed the results and revised the manuscript. This work was partially supported by the Major State Basic Research Development Program (Grants 2014CB921600 and 2016YFA0203900), Natural Science Foundation of China (Grants 11322441, 61674157, 61574101, 61521005, and 61574152), Fund of Shanghai Science and Technology Foundation (Grants 13JC1408800 and 14JC1406400), CAS Interdisciplinary Innovation Team, and Ten Thousand Talents Program for Young Talents.
PY - 2016/11/8
Y1 - 2016/11/8
N2 - An efficient ferroelectric-enhanced side-gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10−28 A2 at a source-drain voltage Vds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 105, responsivity of 2.6 × 105 A W−1, and specific detectivity (D*) of 2.3 × 1016 Jones at a low power density of 0.01 mW cm−2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high-performance, and low power consumption ultraviolet photodetector.
AB - An efficient ferroelectric-enhanced side-gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10−28 A2 at a source-drain voltage Vds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 105, responsivity of 2.6 × 105 A W−1, and specific detectivity (D*) of 2.3 × 1016 Jones at a low power density of 0.01 mW cm−2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high-performance, and low power consumption ultraviolet photodetector.
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U2 - 10.1002/adfm.201603152
DO - 10.1002/adfm.201603152
M3 - Article
AN - SCOPUS:84987762531
VL - 26
SP - 7690
EP - 7696
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 42
ER -