High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Toshio Tsurushima; Yi-Qun Zhang; Hiroki Yasunaga; Atsushi Kenjo; Toshio Tsurushima; Masanobu Miyao

doi:10.1143/JJAP.40.2775

High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Toshio Tsurushima, Yi-Qun Zhang, Hiroki Yasunaga, Atsushi Kenjo, Toshio Tsurushima, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Abstract

The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

Original language	English
Pages (from-to)	2775-2778
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.40.2775
Publication status	Published - Apr 1 2001
Externally published	Yes

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title = "High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode",

abstract = "The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.",

author = "Toshio Tsurushima and Yi-Qun Zhang and Hiroki Yasunaga and Atsushi Kenjo and Toshio Tsurushima and Masanobu Miyao",

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T1 - High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

AU - Tsurushima, Toshio

AU - Zhang, Yi-Qun

AU - Yasunaga, Hiroki

AU - Kenjo, Atsushi

AU - Tsurushima, Toshio

AU - Miyao, Masanobu

PY - 2001/4/1

Y1 - 2001/4/1

N2 - The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

AB - The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

U2 - 10.1143/JJAP.40.2775

DO - 10.1143/JJAP.40.2775

M3 - Article

VL - 40

SP - 2775

EP - 2778

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 4

ER -

High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Abstract

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