High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

Dingshan Zheng, Hehai Fang, Mingsheng Long, Feng Wu, Peng Wang, Fan Gong, Xing Wu, Johnny C. Ho, Lei Liao, Weida Hu

Research output: Contribution to journalArticlepeer-review

Abstract

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 104 (2.8 × 104), good responsivity of 1.0 × 104 A W-1 (1.6 × 104 A W-1), and excellent detectivity of 3.3 × 1012 Jones (2.4 × 1012 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Original languageEnglish
Pages (from-to)7239-7245
Number of pages7
JournalACS nano
Volume12
Issue number7
DOIs
Publication statusPublished - Jul 24 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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