High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Masashi Mamada; Jun Ichi Nishida; Daisuke Kumaki; Shizuo Tokito; Yoshiro Yamashita

doi:10.1039/b801425f

High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Masashi Mamada, Jun Ichi Nishida, Daisuke Kumaki, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm² V^-1 s^-1 in air.

Original language	English
Pages (from-to)	3442-3447
Number of pages	6
Journal	Journal of Materials Chemistry
Volume	18
Issue number	29
DOIs	https://doi.org/10.1039/b801425f
Publication status	Published - 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Chemistry

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10.1039/b801425f

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abstract = "A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2 V-1 s-1 in air.",

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AU - Kumaki, Daisuke

AU - Tokito, Shizuo

AU - Yamashita, Yoshiro

PY - 2008

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AB - A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2 V-1 s-1 in air.

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High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Abstract

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