High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Masashi Mamada, Jun Ichi Nishida, Daisuke Kumaki, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2 V-1 s-1 in air.

Original languageEnglish
Pages (from-to)3442-3447
Number of pages6
JournalJournal of Materials Chemistry
Volume18
Issue number29
DOIs
Publication statusPublished - 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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