High-performance poly-Ge thin-film transistor with NiGe Schottky source/drain

Taizoh Sadoh, H. Kamizuru, A. Kenjo, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-performance poly-Ge thin-film transistors (TFTs) were fabricated using NiGe Schottky contacts as source/drain (S/D). First, formation of NiGe layers by annealing of Ni/n-Ge structures was investigated as a function of annealing temperature, and NiGe/n-Ge Schottky contacts (φBn=0.51 eV) with a low reverse leakage current (∼10-2A/cm2) were realized at 200-300°C On the basis of the results, NiGe Schottky S/D contacts were fabricated using poly-Ge/quartz s.ubstrates. The TFTs showed good operation characteristics with a hole mobility of ∼140 cm2V 1s1. This is a great advantage for the realization of high-performance TFTs for future system-in-displays.

Original languageEnglish
Title of host publicationSelected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
Pages1181-1184
Number of pages4
EditionPART 2
Publication statusPublished - Dec 1 2007
Event6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 - Jeju, Korea, Republic of
Duration: Nov 5 2007Nov 9 2007

Publication series

NameMaterials Science Forum
NumberPART 2
Volume561-565
ISSN (Print)0255-5476

Other

Other6th Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6
CountryKorea, Republic of
CityJeju
Period11/5/0711/9/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Sadoh, T., Kamizuru, H., Kenjo, A., & Miyao, M. (2007). High-performance poly-Ge thin-film transistor with NiGe Schottky source/drain. In Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6 (PART 2 ed., pp. 1181-1184). (Materials Science Forum; Vol. 561-565, No. PART 2).