High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

K. Makihira, M. Yoshii, T. Asano

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.

Original languageEnglish
Pages189-190
Number of pages2
Publication statusPublished - Jan 1 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Makihira, K., Yoshii, M., & Asano, T. (2001). High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. 189-190. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States.