High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

K. Makihira, M. Yoshii, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
Pages189-190
Number of pages2
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

Fingerprint

Thin film transistors
Polysilicon
Metals
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Makihira, K., Yoshii, M., & Asano, T. (2001). High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. In Annual Device Research Conference Digest (pp. 189-190)

High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. / Makihira, K.; Yoshii, M.; Asano, Tanemasa.

Annual Device Research Conference Digest. 2001. p. 189-190.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makihira, K, Yoshii, M & Asano, T 2001, High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. in Annual Device Research Conference Digest. pp. 189-190, Device Research Conference (DRC), Notre Dame, IN, United States, 6/25/01.
Makihira K, Yoshii M, Asano T. High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. In Annual Device Research Conference Digest. 2001. p. 189-190
Makihira, K. ; Yoshii, M. ; Asano, Tanemasa. / High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology. Annual Device Research Conference Digest. 2001. pp. 189-190
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