High-Power 0.98-µm Strained Quantum-Well Lasers Fabricated Using In Situ Monitored Reactive Ion Beam Etching

Kiichi Hamamoto, Hiroaki Chida, Takashi Miyazaki, Shin Ishikawa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

0.98-µm wavelength strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.

Original languageEnglish
Pages (from-to)602-604
Number of pages3
JournalIEEE Photonics Technology Letters
Volume7
Issue number6
DOIs
Publication statusPublished - Jan 1 1995
Externally publishedYes

Fingerprint

Optical fiber coupling
Quantum well lasers
quantum well lasers
Ion beams
Semiconductor quantum wells
ridges
Etching
ion beams
etching
Wavelength
Geometry
Lasers
quantum wells
fibers
geometry
wavelengths
lasers

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

High-Power 0.98-µm Strained Quantum-Well Lasers Fabricated Using In Situ Monitored Reactive Ion Beam Etching. / Hamamoto, Kiichi; Chida, Hiroaki; Miyazaki, Takashi; Ishikawa, Shin.

In: IEEE Photonics Technology Letters, Vol. 7, No. 6, 01.01.1995, p. 602-604.

Research output: Contribution to journalArticle

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