High power density converter using SiC-SBD

I. Omura, M. Tsukuda, W. Saito, T. Domon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.

Original languageEnglish
Title of host publicationFourth Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007 - Conference Proceedings
Pages575-580
Number of pages6
DOIs
Publication statusPublished - Oct 1 2007
Externally publishedYes
Event4th Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007 - Nagoya, Japan
Duration: Apr 2 2007Apr 5 2007

Publication series

NameFourth Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007 - Conference Proceedings

Other

Other4th Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007
CountryJapan
CityNagoya
Period4/2/074/5/07

All Science Journal Classification (ASJC) codes

  • Energy(all)
  • Electrical and Electronic Engineering

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