TY - GEN
T1 - High power density converter using SiC-SBD
AU - Omura, I.
AU - Tsukuda, M.
AU - Saito, W.
AU - Domon, T.
PY - 2007/10/1
Y1 - 2007/10/1
N2 - This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.
AB - This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.
UR - http://www.scopus.com/inward/record.url?scp=34748859719&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34748859719&partnerID=8YFLogxK
U2 - 10.1109/PCCON.2007.373024
DO - 10.1109/PCCON.2007.373024
M3 - Conference contribution
AN - SCOPUS:34748859719
SN - 142440844X
SN - 9781424408443
T3 - Fourth Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007 - Conference Proceedings
SP - 575
EP - 580
BT - Fourth Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007 - Conference Proceedings
T2 - 4th Power Conversion Conference-NAGOYA, PCC-NAGOYA 2007
Y2 - 2 April 2007 through 5 April 2007
ER -