Narrow ridge waveguide 0.98-μm InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.
|Number of pages||2|
|Publication status||Published - 1994|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics