High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport

M. Bockowski, P. Strak, P. Kempisty, I. Grzegory, S. Krukowski, B. Lucznik, S. Porowski

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Seeded growth of GaN on 1 in sapphire/GaN templates by high-pressure solution method is presented. Five crystallization runs at the same growth conditions (temperatures, supercooling, nitrogen pressure, time) but different in geometry are described in details. The finite element calculation is used for modeling the convective transport in the liquid gallium. The stream lines, convectional flow velocity vectors and isotherm lines in liquid metal are determined based on experimentally measured temperatures in the crucible wall. The influence of the seed and the baffle for convection in liquid metal is analyzed in details.

Original languageEnglish
Pages (from-to)259-267
Number of pages9
JournalJournal of Crystal Growth
Volume307
Issue number2
DOIs
Publication statusPublished - Sep 15 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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