Influence of process conditions including water vapor partial pressure, gas flow rate and total annealing pressure on YBa2Cu3O 7-y (YBCO) film growth has been investigated in order to clarify the YBCO growth mechanism and to increase the growth rate. YBCO films have been fabricated on a LaAlO3 substrate by metalorganic deposition (MOD) process using trifluoroacetates (TFA) as a solute source. It was found that the processing parameters such as high water partial pressure, high diffusion constants due to low total pressure, and high gas flow rate affect the YBCO growth rate. Furthermore, it was empirically suggested that the growth rate of the YBCO film was in proportion to both the square root of water partial pressure and gas flow rate and was in inverse proportion to the one sixth power of the total pressure. The YBCO growth rate of about 2 times as fast as the previous condition was achieved with high performance by optimizing the process parameters.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering