High quality a-Si:H films have been deposited using the cluster-suppressed plasma CVD method. The stabilized FF value of a Schottky cell of 1 μm thick a-Si:H film deposited at 0.7 nm/s using the cluster-suppression method is as high as the initial value of a cell of 0.6 μm film deposited at 0.2 nm/s using the conventional method. This indicates the advantage of the cluster suppression method over the conventional one. The cell performance depends on the substrate temperature Ts and the highest power density is obtained at Ts = 300°C. The value of hydrogen content C H has little Ts dependence, while the Rα value decreases sharply from Rα =0.2 for Ts = 200°C to Rα= 0.034 for Ts =280°C. Moreover, a high compressive stress above 9×108Nm-2 is found to degrade the FF value.