High-quality a-Si:H films deposited at 0.7 NM/S by cluster suppressed plasma CVD method

Masaharu Shiratani, Kazunori Koga, Atsusi Harikai, Takanori Ogata, Yukio Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quality a-Si:H films have been deposited using the cluster-suppressed plasma CVD method. The stabilized FF value of a Schottky cell of 1 μm thick a-Si:H film deposited at 0.7 nm/s using the cluster-suppression method is as high as the initial value of a cell of 0.6 μm film deposited at 0.2 nm/s using the conventional method. This indicates the advantage of the cluster suppression method over the conventional one. The cell performance depends on the substrate temperature Ts and the highest power density is obtained at Ts = 300°C. The value of hydrogen content C H has little Ts dependence, while the Rα value decreases sharply from Rα =0.2 for Ts = 200°C to Rα= 0.034 for Ts =280°C. Moreover, a high compressive stress above 9×108Nm-2 is found to degrade the FF value.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1635-1638
Number of pages4
Publication statusPublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period5/11/035/18/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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