High quality epitaxial ZnO films grown on solid-phase crystallized buffer layers

Kazunari Kuwahara, Naho Itagaki, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kunihiro Kamataki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

High quality epitaxial ZnO films on sapphire (110) plane have been fabricated on ZnO homo-buffer layers crystallized via solid-phase epitaxially (SPE). The SPE-ZnO films are fabricated by annealing of amorphous ZnON (a-ZnON) films deposited by RF magnetron sputtering. During annealing, the a-ZnON films are oxidized and converted to ZnO crystal. X-ray diffraction (XRD) analysis shows that the resultant films are epitaxially grown on the sapphire substrates. By using the SPE-ZnO films as homo-buffer layers, the ZnO films with high crystallinity, which are deposited by RF magnetron sputtering, are fabricated. The full width at half-maximum of XRD patterns for 2θ-ω and ω scan of (002) plane are 0.094° and 0.12°, respectively, being significantly small compared with 0.24° and 0.55° for the films without buffer layers. Thus utilizing SPE buffer layers is very promising to obtain epitaxial ZnO films with high crystallinity.

Original languageEnglish
Pages (from-to)4674-4677
Number of pages4
JournalThin Solid Films
Volume520
Issue number14
DOIs
Publication statusPublished - May 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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