High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.

Original languageEnglish
Article number092102
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
Publication statusPublished - Mar 4 2013

Fingerprint

melting
insulators
temperature
seeds
profiles
melting points
energy bands
crystallinity
platforms
Raman spectra
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth. / Tojo, Yuki; Matsumura, Ryo; Yokoyama, Hiroyuki; Kurosawa, Masashi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 102, No. 9, 092102, 04.03.2013.

Research output: Contribution to journalArticle

Tojo, Yuki ; Matsumura, Ryo ; Yokoyama, Hiroyuki ; Kurosawa, Masashi ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu. / High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth. In: Applied Physics Letters. 2013 ; Vol. 102, No. 9.
@article{8fb13951fbfe44eda3e924c08f0d1f77,
title = "High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth",
abstract = "Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.",
author = "Yuki Tojo and Ryo Matsumura and Hiroyuki Yokoyama and Masashi Kurosawa and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",
year = "2013",
month = "3",
day = "4",
doi = "10.1063/1.4794409",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

AU - Tojo, Yuki

AU - Matsumura, Ryo

AU - Yokoyama, Hiroyuki

AU - Kurosawa, Masashi

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2013/3/4

Y1 - 2013/3/4

N2 - Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.

AB - Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.

UR - http://www.scopus.com/inward/record.url?scp=84875186017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875186017&partnerID=8YFLogxK

U2 - 10.1063/1.4794409

DO - 10.1063/1.4794409

M3 - Article

AN - SCOPUS:84875186017

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092102

ER -