Abstract
GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.
Original language | English |
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Pages (from-to) | 179-184 |
Number of pages | 6 |
Journal | ECS Transactions |
Volume | 58 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 |
All Science Journal Classification (ASJC) codes
- Engineering(all)