High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Y. Kinoshita, R. Matsumura, T. Sadoh, T. Nishimura, M. Miyao

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Abstract

GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalECS Transactions
Volume58
Issue number9
DOIs
Publication statusPublished - Jan 1 2013

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

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