High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Y. Kinoshita; R. Matsumura; T. Sadoh; T. Nishimura; M. Miyao

doi:10.1149/05809.0179ecst

High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Y. Kinoshita, R. Matsumura, T. Sadoh, T. Nishimura, M. Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.

Original language	English
Pages (from-to)	179-184
Number of pages	6
Journal	ECS Transactions
Volume	58
Issue number	9
DOIs	https://doi.org/10.1149/05809.0179ecst
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Engineering(all)

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@article{559cee56f7b046ef848bd57816018c0b,

title = "High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth",

abstract = "GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.",

author = "Y. Kinoshita and R. Matsumura and T. Sadoh and T. Nishimura and M. Miyao",

year = "2013",

doi = "10.1149/05809.0179ecst",

language = "English",

volume = "58",

pages = "179--184",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

AU - Kinoshita, Y.

AU - Matsumura, R.

AU - Sadoh, T.

AU - Nishimura, T.

AU - Miyao, M.

PY - 2013

Y1 - 2013

N2 - GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.

AB - GeSn alloys are attractive materials, with a potentially major impact on next-generation device applications due to the superior electrical properties and transition to direct band gap. We investigate growth of GeSn by annealing of a-Ge/Sn/c-Ge stacked structures. This achieves liquid-phase epitaxial growth of defectfree GeSn with non-equilibrium Sn concentration (∼2%) on Ge substrates by a low-temperature annealing (∼600°C). The nonequilibrium Sn concentration in this GeSn layers is guaranteed thermal stability for post-annealing at 600°C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=84904903349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904903349&partnerID=8YFLogxK

U2 - 10.1149/05809.0179ecst

DO - 10.1149/05809.0179ecst

M3 - Article

AN - SCOPUS:84904903349

VL - 58

SP - 179

EP - 184

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 9

ER -