High-quality SiC bulk single crystal growth based on simulation and experiment

S. I. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi, F. Hirose, H. Yamaguchi, W. Bahng, K. Arai

Research output: Contribution to journalConference article

17 Citations (Scopus)

Abstract

The numerical simulation and in-situ X-ray topography were applied to observe the phenomena inside a crucible. Numerical simulation pointed out that macroscopic grown crystal quality such as grown crystal shape strongly depends on the temperature distribution inside a crucible. In-situ X-ray topography revealed that when the defects were generated, and how the defects were propagated. Most of defects were generated at the initial growth stage. It is important to control the initial stage in order to obtain a high quality SiC single crystal. Numerical simulation also suggested that it is important reduce the residual stress in a grown crystal in order to avoid the dislocation occurrence. From these results based on numerical simulation and experiment, SiC sublimation growth was controlled actively, and the large and high quality SiC single crystal have been grown.

Original languageEnglish
Pages (from-to)29-34
Number of pages6
JournalMaterials Science Forum
Volume457-460
Issue numberI
DOIs
Publication statusPublished - Jan 1 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Nishizawa, S. I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., & Arai, K. (2004). High-quality SiC bulk single crystal growth based on simulation and experiment. Materials Science Forum, 457-460(I), 29-34. https://doi.org/10.4028/www.scientific.net/msf.457-460.29