Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2 /V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)