High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Masanobu Miyao, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2 /V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.

Original languageEnglish
Article number022115
JournalApplied Physics Letters
Volume95
Issue number2
DOIs
Publication statusPublished - Jul 24 2009

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transistors
quartz
melting
single crystals
hole mobility
thin films
carrier mobility
seeds
high speed
temperature dependence
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth. / Miyao, Masanobu; Toko, Kaoru; Tanaka, Takanori; Sadoh, Taizoh.

In: Applied Physics Letters, Vol. 95, No. 2, 022115, 24.07.2009.

Research output: Contribution to journalArticle

Miyao, Masanobu ; Toko, Kaoru ; Tanaka, Takanori ; Sadoh, Taizoh. / High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth. In: Applied Physics Letters. 2009 ; Vol. 95, No. 2.
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