High quality single-crystalline Ge-rich SiGe on insulator structures by Si-doping controlled rapid melting growth

Takanori Tanaka, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Ge-rich SiGe-on-insulator (SGOI) is required for high speed transistors. We investigated the effects of Si doping on the growth characteristics of SGOI produced by rapid melting growth. The aggregation of Ge, observed for pure Ge wide stripes (>5 μm), can be suppressed by Si doping. Si doping causes rotational growth of SiGe stripes, but this can be controlled using lower Si doping concentrations and growth temperatures. Singlecrystalline Ge-rich SGOI (Ge concentration > 96%) that is wide enough (15 μm) for device fabrication is thus produced. Transmission electron microscopy reveals that the Ge-rich SGOI does not contain dislocations or stacking faults.

Original languageEnglish
Article number031301
JournalApplied Physics Express
Volume3
Issue number3
DOIs
Publication statusPublished - Mar 2010

Fingerprint

Melting
Doping (additives)
melting
insulators
Crystalline materials
Stacking faults
Growth temperature
Dislocations (crystals)
crystal defects
Transistors
transistors
Agglomeration
high speed
Transmission electron microscopy
Fabrication
transmission electron microscopy
fabrication
causes
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High quality single-crystalline Ge-rich SiGe on insulator structures by Si-doping controlled rapid melting growth. / Tanaka, Takanori; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Express, Vol. 3, No. 3, 031301, 03.2010.

Research output: Contribution to journalArticle

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