High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD

Kazunori Koga, Hiroshi Sato, Yuuki Kawashima, William M. Nakamura, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9 × 1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method.

Original languageEnglish
Title of host publicationPhotovoltaic Materials and Manufacturing Issues II
Pages217-222
Number of pages6
Publication statusPublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1210
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/2/09

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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