High rate deposition of highly stable a-Si:H films using multi-hollow discharges for thin films solar cells

William Makoto Nakamura, Hidefumi Matsuzaki, Hiroshi Sato, Yuuki Kawashima, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We developed a multi-hollow discharge plasma chemical vapor deposition (CVD) method to deposit a-Si:H films of high stability against light exposure for solar cell applications. This method suppresses incorporation of clusters, which are formed in discharges, into films; and such a-Si:H films without cluster incorporation show high stability against light exposure. Aiming at increasing the deposition rate, we have developed a honeycomb type electrode with more than double number of holes, and we have realized deposition of highly stable a-Si:H films of 4.7×1015cm-3 in stabilized defect density at a rate of 3.0nm/s and better film thickness uniformity within 5% in an area of 4cm in diameter.

Original languageEnglish
JournalSurface and Coatings Technology
Volume205
Issue numberSUPPL. 1
DOIs
Publication statusPublished - Dec 25 2010

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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