High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma

Chisato Niikura, Naho Itagaki, Michio Kondo, Yoshinobu Kawai, Akihisa Matsuda

Research output: Contribution to journalConference article

42 Citations (Scopus)

Abstract

We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2×10 16 cm-3 were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalThin Solid Films
Volume457
Issue number1
DOIs
Publication statusPublished - Jun 1 2004
Event16th Symposium on Plasma Science for Materials (SPSM-16) - Tokyo, Japan
Duration: Jun 4 2003Jun 5 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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