Abstract
We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2×10 16 cm-3 were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 84-89 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 457 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jun 1 2004 |
| Event | 16th Symposium on Plasma Science for Materials (SPSM-16) - Tokyo, Japan Duration: Jun 4 2003 → Jun 5 2003 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Niikura, C., Itagaki, N., Kondo, M., Kawai, Y., & Matsuda, A. (2004). High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma. Thin Solid Films, 457(1), 84-89. https://doi.org/10.1016/j.tsf.2003.12.041