TY - JOUR
T1 - High-rate growth of microcrystalline silicon films using a high-density SiH4/H2 glow-discharge plasma
AU - Niikura, Chisato
AU - Itagaki, Naho
AU - Kondo, Michio
AU - Kawai, Yoshinobu
AU - Matsuda, Akihisa
N1 - Funding Information:
The authors would like to thank Prof. N. Sato of Tohoku University for beneficial suggestions and Miss A. Sato for help with the ESR measurements. This work was partially supported by New Energy and Industrial Technology Development Organization (NEDO).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/6/1
Y1 - 2004/6/1
N2 - We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2×10 16 cm-3 were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions.
AB - We developed a novel technique for high-rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to generate uniformly flat-distributed stable high-density-plasma spots near cathode-surface. Improvement of quality of high-rate grown films was discussed, and microcrystalline silicon films with a low defect density of 1.2×10 16 cm-3 were obtained at a high rate of 7.7 nm/s, demonstrating the efficient gas dissociation and the effectiveness of the novel cathode. The spatial distribution of plasma at cathode-surface holes was analyzed using optical emission spectroscopy for further optimization of plasma conditions.
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U2 - 10.1016/j.tsf.2003.12.041
DO - 10.1016/j.tsf.2003.12.041
M3 - Conference article
AN - SCOPUS:2342568977
VL - 457
SP - 84
EP - 89
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
T2 - 16th Symposium on Plasma Science for Materials (SPSM-16)
Y2 - 4 June 2003 through 5 June 2003
ER -