High-resolution capability of optical near-field imprint lithography

T. Yatsui, Y. Nakajima, Wataru Nomura, M. Ohtsu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide.

Original languageEnglish
Pages (from-to)265-267
Number of pages3
JournalApplied Physics B: Lasers and Optics
Volume84
Issue number1-2
DOIs
Publication statusPublished - Jul 1 2006

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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