TY - JOUR
T1 - High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios
AU - Miao, Jinshui
AU - Hu, Weida
AU - Guo, Nan
AU - Lu, Zhenyu
AU - Liu, Xingqiang
AU - Liao, Lei
AU - Chen, Pingping
AU - Jiang, Tao
AU - Wu, Shiwei
AU - Ho, Johnny C.
AU - Wang, Lin
AU - Chen, Xiaoshuang
AU - Lu, Wei
N1 - Publisher Copyright:
© 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/2/25
Y1 - 2015/2/25
N2 - Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and Ilight/Idark ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW-1 and Ilight/Idark ratio of 5 × 102, while the photoresponsivity and I light/Idark ratio of graphene infrared photodetectors are 0.1 mAW-1 and 1, respectively. The Fermi level (EF) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.
AB - Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and Ilight/Idark ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW-1 and Ilight/Idark ratio of 5 × 102, while the photoresponsivity and I light/Idark ratio of graphene infrared photodetectors are 0.1 mAW-1 and 1, respectively. The Fermi level (EF) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.
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U2 - 10.1002/smll.201402312
DO - 10.1002/smll.201402312
M3 - Article
AN - SCOPUS:84923363361
VL - 11
SP - 936
EP - 942
JO - Small
JF - Small
SN - 1613-6810
IS - 8
ER -