High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy

K. Matsuyama; H. Asada; S. Ikeda; K. Umezu; K. Taniguchi

doi:10.1109/20.539095

High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy

K. Matsuyama, H. Asada, S. Ikeda, K. Umezu, K. Taniguchi

Electronic Devices

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.

Original language	English
Pages (from-to)	4612-4614
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539095
Publication status	Published - Dec 1 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.539095

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abstract = "A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.",

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AU - Matsuyama, K.

AU - Asada, H.

AU - Ikeda, S.

AU - Umezu, K.

AU - Taniguchi, K.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.

AB - A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.

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High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy

Abstract

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