A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering