High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy

K. Matsuyama, H. Asada, S. Ikeda, K. Umezu, K. Taniguchi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

A highly sensitive magnetoresistance behavior related to the well defined induced uniaxial anisotropy has been observed in a single spin valve deposited with a conventional electron beam evaporation. An external magnetic field of 20 Oe (deposition field) was applied during the deposition to induce the anisotropy, which resulted in a marked increase of the MR ratio. Magnetoresistence changes of 4.1 % (improved from 3.1 % due to the application of the deposition field) for NiFe/Cu/Co and 6.3 % for NiFe/Co/Cu/Co were obtained in a micro strip pattern prepared by an Ar ion milling through photoresist mask. A hysteresis free linear MR behavior has been realized in the patterned samples.

Original languageEnglish
Pages (from-to)4612-4614
Number of pages3
JournalIEEE Transactions on Magnetics
Volume32
Issue number5 PART 2
DOIs
Publication statusPublished - Dec 1 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High sensitive magnetoresistance in evaporated spin valves with growth-induced uniaxial anisotropy'. Together they form a unique fingerprint.

Cite this