High sensitivity and low detection limit of acetone sensor based on NiO/Zn2SnO4 p-n heterojunction octahedrons

Chaoge Zhou, Fanqi Meng, Ke Chen, Xueli Yang, Tianshuang Wang, Peng Sun, Fangmeng Liu, Xu Yan, Kengo Shimanoe, Geyu Lu

Research output: Contribution to journalArticlepeer-review


In this work, we successfully prepare the octahedral NiO/Zn2SnO4 p-n heterostructure by a simple hydrothermal synthesis and subsequent wet impregnation process. The microscopic morphology characterization results show that the as-prepared composites are uniformly dispersed and have an octahedral structure with a size of 3−5 μm. The gas devices are fabricated and their sensing performances are investigated systematically. The response and selectivity of NiO/Zn2SnO4 composites to acetone have been significantly improved than that of pure Zn2SnO4. Moreover, the response of the sensor to 100 ppb acetone is 1.4 at 300 °C, indicating that the detection limit is less than 100 ppb. The enhancement in sensing properties of composites is largely due to the p-n heterojunction formed by NiO and Zn2SnO4, which causes the transfer of carriers and the catalytic effect of NiO.

Original languageEnglish
Article number129912
JournalSensors and Actuators, B: Chemical
Publication statusPublished - Jul 15 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High sensitivity and low detection limit of acetone sensor based on NiO/Zn<sub>2</sub>SnO<sub>4</sub> p-n heterojunction octahedrons'. Together they form a unique fingerprint.

Cite this