High-sensitivity measurement of thermal deformation in a stacked multichip package

Yasuyuki Morita, Kazuo Arakawa, Mitsugu Todo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The thermal deformation of a stacked multichip package, which is a newly developed electronic package, was measured by phase-shifting moiréinterferometry. We developed this method using a wedged glass plate as a phase shifter to obtain displacement fields having a sensitivity of 30 nm/line. This method also enabled the quantitative determination of the strain distributions in all observation areas. Thermal loading was applied from room temperature (25 °C) to elevated temperatures of 75 °C and 100 °C where the thermal strains were examined and compared. The results showed that the longitudinal strain εxx was concentrated at the ends of two silicon chips, and the longitudinal strain εyy increased between the two silicon chips. The shear strain γxy increased at the end of the lower silicon chip from 0.17% to 0.30% when the temperature increased by 25 °C.

Original languageEnglish
Pages (from-to)137-143
Number of pages7
JournalIEEE Transactions on Components and Packaging Technologies
Volume30
Issue number1
DOIs
Publication statusPublished - Mar 1 2007

Fingerprint

Silicon
Phase shifters
Shear strain
Temperature
Glass
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-sensitivity measurement of thermal deformation in a stacked multichip package. / Morita, Yasuyuki; Arakawa, Kazuo; Todo, Mitsugu.

In: IEEE Transactions on Components and Packaging Technologies, Vol. 30, No. 1, 01.03.2007, p. 137-143.

Research output: Contribution to journalArticle

@article{2cb4a69b21d84d15b8eb4b7c237b9673,
title = "High-sensitivity measurement of thermal deformation in a stacked multichip package",
abstract = "The thermal deformation of a stacked multichip package, which is a newly developed electronic package, was measured by phase-shifting moir{\'e}interferometry. We developed this method using a wedged glass plate as a phase shifter to obtain displacement fields having a sensitivity of 30 nm/line. This method also enabled the quantitative determination of the strain distributions in all observation areas. Thermal loading was applied from room temperature (25 °C) to elevated temperatures of 75 °C and 100 °C where the thermal strains were examined and compared. The results showed that the longitudinal strain εxx was concentrated at the ends of two silicon chips, and the longitudinal strain εyy increased between the two silicon chips. The shear strain γxy increased at the end of the lower silicon chip from 0.17{\%} to 0.30{\%} when the temperature increased by 25 °C.",
author = "Yasuyuki Morita and Kazuo Arakawa and Mitsugu Todo",
year = "2007",
month = "3",
day = "1",
doi = "10.1109/TCAPT.2007.892093",
language = "English",
volume = "30",
pages = "137--143",
journal = "IEEE Transactions on Components and Packaging Technologies",
issn = "1521-3331",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - High-sensitivity measurement of thermal deformation in a stacked multichip package

AU - Morita, Yasuyuki

AU - Arakawa, Kazuo

AU - Todo, Mitsugu

PY - 2007/3/1

Y1 - 2007/3/1

N2 - The thermal deformation of a stacked multichip package, which is a newly developed electronic package, was measured by phase-shifting moiréinterferometry. We developed this method using a wedged glass plate as a phase shifter to obtain displacement fields having a sensitivity of 30 nm/line. This method also enabled the quantitative determination of the strain distributions in all observation areas. Thermal loading was applied from room temperature (25 °C) to elevated temperatures of 75 °C and 100 °C where the thermal strains were examined and compared. The results showed that the longitudinal strain εxx was concentrated at the ends of two silicon chips, and the longitudinal strain εyy increased between the two silicon chips. The shear strain γxy increased at the end of the lower silicon chip from 0.17% to 0.30% when the temperature increased by 25 °C.

AB - The thermal deformation of a stacked multichip package, which is a newly developed electronic package, was measured by phase-shifting moiréinterferometry. We developed this method using a wedged glass plate as a phase shifter to obtain displacement fields having a sensitivity of 30 nm/line. This method also enabled the quantitative determination of the strain distributions in all observation areas. Thermal loading was applied from room temperature (25 °C) to elevated temperatures of 75 °C and 100 °C where the thermal strains were examined and compared. The results showed that the longitudinal strain εxx was concentrated at the ends of two silicon chips, and the longitudinal strain εyy increased between the two silicon chips. The shear strain γxy increased at the end of the lower silicon chip from 0.17% to 0.30% when the temperature increased by 25 °C.

UR - http://www.scopus.com/inward/record.url?scp=34147175417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147175417&partnerID=8YFLogxK

U2 - 10.1109/TCAPT.2007.892093

DO - 10.1109/TCAPT.2007.892093

M3 - Article

AN - SCOPUS:34147175417

VL - 30

SP - 137

EP - 143

JO - IEEE Transactions on Components and Packaging Technologies

JF - IEEE Transactions on Components and Packaging Technologies

SN - 1521-3331

IS - 1

ER -