High-speed dicing of SiC wafers by femtosecond pulsed laser

Akira Nakajima, Yosuke Tateishi, Hiroshi Murakami, Hidetomo Takahashi, Michiharu Ota, Ryoji Kosugi, Takeshi Mitani, Shin Ichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) is demonstrated as a high-speed and cost-effective dicing process for SiC wafers. The developed dicing process consists of cleavage groove formation on a SiC wafer surface by the FSPL, followed by chip separation by pressing a cleavage blade. The effective FSPL scan speed on the SiC surfaces was 33 mm/s. Kerf loss is negligible in the developed FSPL dicing process. In addition, the residual lattice strain in the FSPL-diced SiC chips was comparably small to that of the conventional mechanical process using diamond saws, due to the absence of the lattice heating effect in femtosecond-laser processes.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages524-527
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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