High-speed dicing of SiC wafers by femtosecond pulsed laser

Akira Nakajima, Yosuke Tateishi, Hiroshi Murakami, Hidetomo Takahashi, Michiharu Ota, Ryoji Kosugi, Takeshi Mitani, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) is demonstrated as a high-speed and cost-effective dicing process for SiC wafers. The developed dicing process consists of cleavage groove formation on a SiC wafer surface by the FSPL, followed by chip separation by pressing a cleavage blade. The effective FSPL scan speed on the SiC surfaces was 33 mm/s. Kerf loss is negligible in the developed FSPL dicing process. In addition, the residual lattice strain in the FSPL-diced SiC chips was comparably small to that of the conventional mechanical process using diamond saws, due to the absence of the lattice heating effect in femtosecond-laser processes.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages524-527
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - Jan 1 2015
Externally publishedYes
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: Sep 21 2014Sep 25 2014

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period9/21/149/25/14

Fingerprint

Pulsed lasers
pulsed lasers
high speed
wafers
cleavage
chips
Diamond cutting tools
pressing
Ultrashort pulses
blades
grooves
diamonds
costs
Heating
heating
lasers
Costs

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., ... Ohashi, H. (2015). High-speed dicing of SiC wafers by femtosecond pulsed laser. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 524-527). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.524

High-speed dicing of SiC wafers by femtosecond pulsed laser. / Nakajima, Akira; Tateishi, Yosuke; Murakami, Hiroshi; Takahashi, Hidetomo; Ota, Michiharu; Kosugi, Ryoji; Mitani, Takeshi; Nishizawa, Shinichi; Ohashi, Hiromichi.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 524-527 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Tateishi, Y, Murakami, H, Takahashi, H, Ota, M, Kosugi, R, Mitani, T, Nishizawa, S & Ohashi, H 2015, High-speed dicing of SiC wafers by femtosecond pulsed laser. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 524-527, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 9/21/14. https://doi.org/10.4028/www.scientific.net/MSF.821-823.524
Nakajima A, Tateishi Y, Murakami H, Takahashi H, Ota M, Kosugi R et al. High-speed dicing of SiC wafers by femtosecond pulsed laser. In Chaussende D, Ferro G, editors, Silicon Carbide and Related Materials 2014. Trans Tech Publications Ltd. 2015. p. 524-527. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.821-823.524
Nakajima, Akira ; Tateishi, Yosuke ; Murakami, Hiroshi ; Takahashi, Hidetomo ; Ota, Michiharu ; Kosugi, Ryoji ; Mitani, Takeshi ; Nishizawa, Shinichi ; Ohashi, Hiromichi. / High-speed dicing of SiC wafers by femtosecond pulsed laser. Silicon Carbide and Related Materials 2014. editor / Didier Chaussende ; Gabriel Ferro. Trans Tech Publications Ltd, 2015. pp. 524-527 (Materials Science Forum).
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