High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method

Kazuo Nakajima, Ryota Murai, Kohei Morishita, Douglas M. Powell, Maulid Kivambe, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A noncontact crucible method was proposed to obtain a crystal-diameter as large as a crucible-diameter. In this method, a Si melt used has a large low-temperature region in its central upper part to ensure Si crystal growth inside it. Therefore, the present method has several merits such as the convex shape of the growing interface in the growth direction, the possibility of growing large ingots even using a small crucible, and the growth of square-like single bulk crystals. In these ingots, dislocations in the ingot moved to the periphery of the ingot from its center during crystal growth, and the dislocation density was on the order of 102-103/cm2. The effective minority carrier lifetime was measured to be as high as 750 μs by the Quasi-Steady-State Photoconductance (QSSPC) method after phosphorus diffusion gettering and Al2O3 thin-film passivation. Especially, this method has a possibility to attain a high growth rate using a high cooling rate because the growth rate was determined by the expansion rate of the low-temperature region in Si melts. The growth rate increases as the cooling rate increases. At the cooling rate of 0.4 K/min, the horizontal growth rate became higher to 1.5 mm/min in the <110> direction. The vertical growth rate was determined as 0.3-0.6 mm/min, and it had a tendency to increase as the depth of Si melts increased. The diameter of ingots can be kept constant during crystal growth using a high cooling rate because the horizontal growth rate increases as the cooling rate increases. An ingot with a diagonal length of 24.5 cm was obtained using the high cooling rate of 0.4 K/min. The diagonal length was as large as 82% of the crucible diameter.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3530-3533
Number of pages4
ISBN (Electronic)9781479943982
DOIs
Publication statusPublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Crucibles
Ingots
Solar cells
Cooling
Crystals
Crystallization
Crystal growth
Dislocations (crystals)
Carrier lifetime
Passivation
Phosphorus
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nakajima, K., Murai, R., Morishita, K., Powell, D. M., Kivambe, M., & Buonassisi, T. (2014). High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3530-3533). [6924870] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924870

High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method. / Nakajima, Kazuo; Murai, Ryota; Morishita, Kohei; Powell, Douglas M.; Kivambe, Maulid; Buonassisi, Tonio.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 3530-3533 6924870 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, K, Murai, R, Morishita, K, Powell, DM, Kivambe, M & Buonassisi, T 2014, High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924870, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 3530-3533, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6924870
Nakajima K, Murai R, Morishita K, Powell DM, Kivambe M, Buonassisi T. High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 3530-3533. 6924870. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). https://doi.org/10.1109/PVSC.2014.6924870
Nakajima, Kazuo ; Murai, Ryota ; Morishita, Kohei ; Powell, Douglas M. ; Kivambe, Maulid ; Buonassisi, Tonio. / High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 3530-3533 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).
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