A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAIAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEIC's for long-wavelength optical interconnection and transmission systems.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering