High-Speed Monolithic Receiver OEIC Consisting of a Waveguide p-i-n Photodiode and HEMT's

Y. Muramoto, K. Kato, Y. Akahori, M. Ikeda, A. Kozen, Y. Itaya

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAIAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 Ω, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEIC's for long-wavelength optical interconnection and transmission systems.

Original languageEnglish
Pages (from-to)685-687
Number of pages3
JournalIEEE Photonics Technology Letters
Volume7
Issue number6
DOIs
Publication statusPublished - Jun 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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