TY - JOUR
T1 - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures
AU - Maeda, Narihiko
AU - Hiroki, Masanobu
AU - Sasaki, Satoshi
AU - Harada, Yuichi
PY - 2012/8/1
Y1 - 2012/8/1
N2 - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.
AB - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.
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U2 - 10.1143/APEX.5.084201
DO - 10.1143/APEX.5.084201
M3 - Article
AN - SCOPUS:84865332367
SN - 1882-0778
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 084201
ER -