High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures

Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.

Original languageEnglish
Article number084201
JournalApplied Physics Express
Volume5
Issue number8
DOIs
Publication statusPublished - Aug 1 2012

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High electron mobility transistors
field effect transistors
threshold voltage
high current
high voltages
Drain current
current density
Threshold voltage
Temperature
shift
room temperature
Current density
electrons
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures. / Maeda, Narihiko; Hiroki, Masanobu; Sasaki, Satoshi; Harada, Yuichi.

In: Applied Physics Express, Vol. 5, No. 8, 084201, 01.08.2012.

Research output: Contribution to journalArticle

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