High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures

Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada

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Abstract

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.

Original languageEnglish
Article number084201
JournalApplied Physics Express
Volume5
Issue number8
DOIs
Publication statusPublished - Aug 1 2012
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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