High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures

Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (Vth) higher than +3 V and drain current density (Id) higher than 600mA/mm was obtained at room temperature. Interestingly, Id did not decrease much at high temperatures, i.e., Id decreased from 610 to 590mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.

Original languageEnglish
Article number08JN18
JournalJapanese journal of applied physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - Aug 1 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'High-temperature characteristics in recessed-gate AlGaN/GaN enhancement-mode heterostructure field effect transistors with enhanced-barrier structures'. Together they form a unique fingerprint.

  • Cite this