High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Fumimasa Horikiri; Tomoyuki Ichikawa; Atsushi Kaimai; Keiji Yashiro; Hiroshige Matsumoto; Tatsuya Kawada; Junichiro Mizusaki

High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Fumimasa Horikiri, Tomoyuki Ichikawa, Atsushi Kaimai, Keiji Yashiro, Hiroshige Matsumoto, Tatsuya Kawada, Junichiro Mizusaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High temperature photovoltaic effects at the Nb doped SrTiO₃ (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO₃ single crystal (100) at 873 K in 1 Pa O₂ condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

Original language	English
Title of host publication	High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium
Editors	E. Opila, T. Maruyama, T. Narita, E. Wuchina, J. Fergus, J. Mizusaki, D. Shifler
Pages	203-209
Number of pages	7
Volume	PV 2004-16
Publication status	Published - 2004
Externally published	Yes
Event	206th ECS Meeting - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	206th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

All Science Journal Classification (ASJC) codes

Engineering(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Horikiri, F., Ichikawa, T., Kaimai, A., Yashiro, K., Matsumoto, H., Kawada, T., & Mizusaki, J. (2004). High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . In E. Opila, T. Maruyama, T. Narita, E. Wuchina, J. Fergus, J. Mizusaki, & D. Shifler (Eds.), High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium (Vol. PV 2004-16, pp. 203-209)

High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . / Horikiri, Fumimasa; Ichikawa, Tomoyuki; Kaimai, Atsushi et al.
High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. ed. / E. Opila; T. Maruyama; T. Narita; E. Wuchina; J. Fergus; J. Mizusaki; D. Shifler. Vol. PV 2004-16 2004. p. 203-209.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Horikiri, F, Ichikawa, T, Kaimai, A, Yashiro, K, Matsumoto, H, Kawada, T & Mizusaki, J 2004, High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . in E Opila, T Maruyama, T Narita, E Wuchina, J Fergus, J Mizusaki & D Shifler (eds), High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. vol. PV 2004-16, pp. 203-209, 206th ECS Meeting, Honolulu, HI, United States, 10/3/04.

Horikiri F, Ichikawa T, Kaimai A, Yashiro K, Matsumoto H, Kawada T et al. High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . In Opila E, Maruyama T, Narita T, Wuchina E, Fergus J, Mizusaki J, Shifler D, editors, High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. Vol. PV 2004-16. 2004. p. 203-209

Horikiri, Fumimasa ; Ichikawa, Tomoyuki ; Kaimai, Atsushi et al. / High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 . High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium. editor / E. Opila ; T. Maruyama ; T. Narita ; E. Wuchina ; J. Fergus ; J. Mizusaki ; D. Shifler. Vol. PV 2004-16 2004. pp. 203-209

@inproceedings{5dd7af6c66544c4da4e182b3061d092c,

title = "High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3 ",

abstract = "High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.",

author = "Fumimasa Horikiri and Tomoyuki Ichikawa and Atsushi Kaimai and Keiji Yashiro and Hiroshige Matsumoto and Tatsuya Kawada and Junichiro Mizusaki",

year = "2004",

language = "English",

volume = "PV 2004-16",

pages = "203--209",

editor = "E. Opila and T. Maruyama and T. Narita and E. Wuchina and J. Fergus and J. Mizusaki and D. Shifler",

booktitle = "High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium",

note = "206th ECS Meeting ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - GEN

T1 - High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

AU - Horikiri, Fumimasa

AU - Ichikawa, Tomoyuki

AU - Kaimai, Atsushi

AU - Yashiro, Keiji

AU - Matsumoto, Hiroshige

AU - Kawada, Tatsuya

AU - Mizusaki, Junichiro

PY - 2004

Y1 - 2004

N2 - High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

AB - High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

UR - http://www.scopus.com/inward/record.url?scp=31744450056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31744450056&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:31744450056

VL - PV 2004-16

SP - 203

EP - 209

BT - High Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium

A2 - Opila, E.

A2 - Maruyama, T.

A2 - Narita, T.

A2 - Wuchina, E.

A2 - Fergus, J.

A2 - Mizusaki, J.

A2 - Shifler, D.

T2 - 206th ECS Meeting

Y2 - 3 October 2004 through 8 October 2004

ER -

High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Abstract

Other

All Science Journal Classification (ASJC) codes

UN SDGs

Other files and links

Fingerprint

Cite this