High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Fumimasa Horikiri, Tomoyuki Ichikawa, Atsushi Kaimai, Keiji Yashiro, Hiroshige Matsumoto, Tatsuya Kawada, Junichiro Mizusaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

Original languageEnglish
Title of host publicationHigh Temperature Corrosion and Materials Chemistry V - Proceedings of the International Symposium
EditorsE. Opila, T. Maruyama, T. Narita, E. Wuchina, J. Fergus, J. Mizusaki, D. Shifler
Number of pages7
VolumePV 2004-16
Publication statusPublished - 2004
Externally publishedYes
Event206th ECS Meeting - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004


Other206th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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