High-temperature resistance of YBa2Cu3O7-δ films under various oxygen pressures

Masashi Mukaida, Shin'ichiro Oikawa, Masanobu Kusunoki, Shigetoshi Ohshima

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The electrical resistance of a c-axis-oriented YBa2Cu3O7-δ film is measured at elevated temperatures, under various values of oxygen pressure. The resistance shows a monotonic increase with substrate temperature up to around 450 °C, indicating little oxygen out-diffusion. Above this temperature, the rapid increase of the electrical resistance shows out-diffusion of oxygen from the film. As the temperature is increased, an abrupt drop occurs above a certain temperature (Tm) where the resistance indicates its highest value. Tm has an oxygen pressure dependence, which is similar to the oxygen pressure dependence of the orthorhombic-to-tetragonal transition line in an oxygen pressure-inverse of temperature phase diagram of YBa2Cu3O7-δ. From the observation of surface morphologies, the Tm is thought to be a sort of melting temperature where a partial melting of the YBa2Cu3O7-δ film occurs.

Original languageEnglish
Pages (from-to)L5-L9
JournalSuperconductor Science and Technology
Issue number9
Publication statusPublished - Sept 1 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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