Abstract
The effects of Ga substitution on the Co-site on the high-temperature thermoelectric properties and microstructure are investigated for the misfitlayered Ca 3Co 4O 9 and the complex perovskite-related Sr 3RECo 4O 10.5 (RE = rare earth) cobalt-based oxides. For both systems, substitution of Ga for Co results in a simultaneous increase in the Seebeck coefficient (S) and the electrical conductivity (σ), and the influence is more significant in the high temperature region. The power factor (S 2 σ) is thereby remarkably improved by Ga substitution, particularly at high temperatures. Texture factor calculations using x-ray diffraction pattern data for pressed and powder samples reveal that the Ga-doped samples are highly textured. Microstructure observed by scanning electron microscopy shows very well-crystallized grains for the samples with Ga substitution for Co. Among the Ga-doped samples, Ca 3Co 3.95Ga 0.05O 9 shows the best ZT value of 0.45 at 1200 K, which is about 87.5% higher than the nondoped one, a considerable improvement.
| Original language | English |
|---|---|
| Pages (from-to) | 716-722 |
| Number of pages | 7 |
| Journal | Journal of Electronic Materials |
| Volume | 40 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 1 2011 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
High-temperature thermoelectric and microstructural characteristics of cobalt-based oxides with ga substituted on the Co-site. / Nong, N. V.; Yanagiya, S.; Monica, S.; Pryds, N.; Ohtaki, M.
In: Journal of Electronic Materials, Vol. 40, No. 5, 01.05.2011, p. 716-722.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-temperature thermoelectric and microstructural characteristics of cobalt-based oxides with ga substituted on the Co-site
AU - Nong, N. V.
AU - Yanagiya, S.
AU - Monica, S.
AU - Pryds, N.
AU - Ohtaki, M.
PY - 2011/5/1
Y1 - 2011/5/1
N2 - The effects of Ga substitution on the Co-site on the high-temperature thermoelectric properties and microstructure are investigated for the misfitlayered Ca 3Co 4O 9 and the complex perovskite-related Sr 3RECo 4O 10.5 (RE = rare earth) cobalt-based oxides. For both systems, substitution of Ga for Co results in a simultaneous increase in the Seebeck coefficient (S) and the electrical conductivity (σ), and the influence is more significant in the high temperature region. The power factor (S 2 σ) is thereby remarkably improved by Ga substitution, particularly at high temperatures. Texture factor calculations using x-ray diffraction pattern data for pressed and powder samples reveal that the Ga-doped samples are highly textured. Microstructure observed by scanning electron microscopy shows very well-crystallized grains for the samples with Ga substitution for Co. Among the Ga-doped samples, Ca 3Co 3.95Ga 0.05O 9 shows the best ZT value of 0.45 at 1200 K, which is about 87.5% higher than the nondoped one, a considerable improvement.
AB - The effects of Ga substitution on the Co-site on the high-temperature thermoelectric properties and microstructure are investigated for the misfitlayered Ca 3Co 4O 9 and the complex perovskite-related Sr 3RECo 4O 10.5 (RE = rare earth) cobalt-based oxides. For both systems, substitution of Ga for Co results in a simultaneous increase in the Seebeck coefficient (S) and the electrical conductivity (σ), and the influence is more significant in the high temperature region. The power factor (S 2 σ) is thereby remarkably improved by Ga substitution, particularly at high temperatures. Texture factor calculations using x-ray diffraction pattern data for pressed and powder samples reveal that the Ga-doped samples are highly textured. Microstructure observed by scanning electron microscopy shows very well-crystallized grains for the samples with Ga substitution for Co. Among the Ga-doped samples, Ca 3Co 3.95Ga 0.05O 9 shows the best ZT value of 0.45 at 1200 K, which is about 87.5% higher than the nondoped one, a considerable improvement.
UR - http://www.scopus.com/inward/record.url?scp=79955915796&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955915796&partnerID=8YFLogxK
U2 - 10.1007/s11664-011-1524-1
DO - 10.1007/s11664-011-1524-1
M3 - Article
AN - SCOPUS:79955915796
VL - 40
SP - 716
EP - 722
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -