High throughput SiC wafer polishing with good surface morphology

Tomohisa Kato, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Tomonori Miura, Shin Ichi Nishizawa, Kazuo Arai

Research output: Contribution to journalConference article

35 Citations (Scopus)


We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists of three process, wafer grinding, lapping and chemical mechanical polishing (CMP), which are completed in shortest about 200 minutes in total for 2 inch wafer. Specimens of 4H- and 6H-SiC were provided from slicing single crystal as wafers oriented (0001) with 0 or 8 degrees offset angle toward to 〈1120〉. By the first grinding using a diamond whetstone wheel, we realized flat surface on the wafers with small TTV error of 1 μm in 15 minutes. After second process of lapping, the wafers were finished by CMP using colloidal silica slurry. AFM observation showed not only scratch-free surface but also atomic steps on the wafers after CMP. Rms marks extremely flat value of 0.08 nm in 10 μm square area.

Original languageEnglish
Pages (from-to)753-756
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2007


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, T., Wada, K., Hozomi, E., Taniguchi, H., Miura, T., Nishizawa, S. I., & Arai, K. (2007). High throughput SiC wafer polishing with good surface morphology. Materials Science Forum, 556-557, 753-756.