Abstract
Very large number of power semiconductor devices(switch) are used in power electronics systems such as AC adapters for PCs, DC-DC converters for CPU, motor driver systems and induction heating systems for home appliances. This paper describes the possibility of GaN-HEMT for power electronics applications. The key design issue is to obtain high breakdown voltage of 600V with the HEMT structure. We employed the field plate structure to relax the electric field peak at the gate electrode edge. A high voltage DC-DC converter operation was also experimentally demonstrated showing possibility of the GaN-HEMT for power electronics applications.
| Original language | English |
|---|---|
| Pages | 386-394 |
| Number of pages | 9 |
| Publication status | Published - Dec 1 2004 |
| Externally published | Yes |
| Event | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
|---|---|
| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
All Science Journal Classification (ASJC) codes
- Engineering(all)