High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

Masaki Tanaka, Kenji Higashida

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals.

Original languageEnglish
Pages (from-to)426-430
Number of pages5
JournalMaterials Science and Engineering A
Volume400-401
Issue number1-2 SUPPL.
DOIs
Publication statusPublished - Jul 25 2005

Fingerprint

crack tips
Silicon
Dislocations (crystals)
Crack tips
high voltages
Crystals
Electrons
Electric potential
silicon
Annealing
crystals
Cracks
electrons
Hinges
Silicon wafers
Indentation
Shielding
Electron microscopy
Fracture toughness
Residual stresses

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals. / Tanaka, Masaki; Higashida, Kenji.

In: Materials Science and Engineering A, Vol. 400-401, No. 1-2 SUPPL., 25.07.2005, p. 426-430.

Research output: Contribution to journalArticle

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