High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

Yoshiharu Takada; Wataru Saito; Masahiko Kuraguchi; Ichiro Omura; Kunio Tsuda

doi:10.1002/pssc.200303531

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura, Kunio Tsuda

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm² under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.

Original language	English
Pages (from-to)	2347-2350
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303531
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: May 25 2003 → May 30 2003

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303531

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title = "High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics",

abstract = "We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.",

author = "Yoshiharu Takada and Wataru Saito and Masahiko Kuraguchi and Ichiro Omura and Kunio Tsuda",

year = "2003",

doi = "10.1002/pssc.200303531",

language = "English",

pages = "2347--2350",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

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T1 - High voltage GaN-based power HEMTs with field plate technique

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

AU - Takada, Yoshiharu

AU - Saito, Wataru

AU - Kuraguchi, Masahiko

AU - Omura, Ichiro

AU - Tsuda, Kunio

PY - 2003

Y1 - 2003

N2 - We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.

AB - We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.

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U2 - 10.1002/pssc.200303531

DO - 10.1002/pssc.200303531

M3 - Conference article

AN - SCOPUS:12344311869

SN - 1610-1634

SP - 2347

EP - 2350

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

Y2 - 25 May 2003 through 30 May 2003

ER -

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

Abstract

All Science Journal Classification (ASJC) codes

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