We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: May 25 2003 → May 30 2003
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics