High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura, Kunio Tsuda

Research output: Contribution to journalConference article

1 Citation (Scopus)


We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FPHEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.

Original languageEnglish
Pages (from-to)2347-2350
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
Publication statusPublished - Dec 1 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this