High-voltage GaN-HEMTs for power electronics applications and current collapse phenomena under high applied voltage

Wataru Saito, Ichiro Omura, Kunio Tsuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Current collapse suppression in 380-V/1.9-A GaN power HEMTs designed for high-voltage power electronics application is reported. The current collapse is caused by the electron trapping by defects in the GaN layer and the interface between the passivation film and the AlGaN layer. Therefore the electric field at the gate edge strongly affects the collapse due to the acceleration of channel electrons. Three types of GaN-HEMTs with different design of the FP structure were fabricated to discuss the relation between the gate-edge electric field and the current collapse. It has been found that the optimized field plate structure minimizes the onresistance increase caused by the current collapse phenomena. In addition, the on-resistance modulation was increased with the leakage current through the GaN layer. It implies that the accelerated electrons are trapped mainly in the GaN-layer defects. Crystal quality improvement of the GaN layer is also necessary to suppress the current collapse phenomena.

Original languageEnglish
Title of host publication2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
Pages209-212
Number of pages4
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 - Austin, TX, United States
Duration: May 14 2007May 17 2007

Publication series

Name2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Conference

Conference22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007
CountryUnited States
CityAustin, TX
Period5/14/075/17/07

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Saito, W., Omura, I., & Tsuda, K. (2007). High-voltage GaN-HEMTs for power electronics applications and current collapse phenomena under high applied voltage. In 2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 (pp. 209-212). (2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007).