Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC

Akira Endo, Fumio Komori, Kouhei Morita, Takashi Kajiwara, Tanaka Satoru

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report highly anisotropic appearance of the quantum Hall effect (QHE) in epitaxial single-layer graphene grown on a vicinal SiC(0001) substrate. Well-developed QHE with zero resistance manifests itself for the current along the steps, whereas the QHE is obscured by pronounced positive magnetoresistance with quadratic magnetic-field dependence for the current across the steps. The latter, as well as the small slope of the Hall resistance, implies the presence of parallel conduction due to remnant carriers in the SiC substrate, albeit with seeming inconsistency with the zero resistance observed for the former current direction. We interpret the anisotropic behavior by assuming that the parallel conduction is sizable along the steps but is virtually prohibited across the steps.

Original languageEnglish
Pages (from-to)237-250
Number of pages14
JournalJournal of Low Temperature Physics
Volume179
Issue number3-4
DOIs
Publication statusPublished - May 1 2015

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Quantum Hall effect
Graphite
Graphene
graphene
quantum Hall effect
conduction
Substrates
Magnetoresistance
Hall resistance
Magnetic fields
slopes
magnetic fields

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC. / Endo, Akira; Komori, Fumio; Morita, Kouhei; Kajiwara, Takashi; Satoru, Tanaka.

In: Journal of Low Temperature Physics, Vol. 179, No. 3-4, 01.05.2015, p. 237-250.

Research output: Contribution to journalArticle

Endo, Akira ; Komori, Fumio ; Morita, Kouhei ; Kajiwara, Takashi ; Satoru, Tanaka. / Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC. In: Journal of Low Temperature Physics. 2015 ; Vol. 179, No. 3-4. pp. 237-250.
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