Highly conducting and very thin ZnO: AI films with ZnO buffer layer fabricated by solid phase crystallization from amorphous phase

Naho Itagaki, Kazunari Kuwahara, Kenta Nakahara, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

We propose a novel method of oxide crystal growth via atomic-additive mediated amorphization. By utilizing this method, solid-phase crystallization (SPC) of ZnO from amorphous phase has been successfully demonstrated via nitrogen atom mediation. The resultant SPC-ZnO films are highly orientated and the crystallinity is higher than that of the films prepared by conventional sputtering. By using the SPC-ZnO as a buffer layer, the resistivity of ZnO:Al (AZO) films is drastically decreased. 20-nm-thick AZO films with a resistivity of 5 × 10- ω cm and an optical transmittance higher than 80% in a wide wavelength range of 400-2500 nm have been obtained.

Original languageEnglish
Article number011101
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - Jan 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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