TY - JOUR
T1 - Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors
AU - Nakanotani, Hajime
AU - Kakizoe, Hayato
AU - Adachi, Chihaya
N1 - Funding Information:
The authors would like to thank Mr. Toru Irie for helpful discussions. This work was supported by a Grant-in-Aid for the Global COE Program, “Science for Future Molecular Systems” from the Ministry of Education, Culture, Sports, Science and Technology of Japan and the Funding Program for World-Leading Innovative R&D on Science and Technology.
PY - 2011/1
Y1 - 2011/1
N2 - The formation of interfacial hole carriers between a rubrene single crystal and a 2 nm-thick molybdenum oxide layer resulted in the formation of a highly conductive interface with a high electrical conductivity of 0.16 S/cm and a very small activation energy of 0.03 eV. This highly conductive interface enabled charge injection and accumulation of a high drain current in the recombination zone in ambipolar transistors, resulting in a significant reduction of the driving voltage with high, balanced hole and electron mobilities of 1.1 and 0.5 cm2V s, respectively.
AB - The formation of interfacial hole carriers between a rubrene single crystal and a 2 nm-thick molybdenum oxide layer resulted in the formation of a highly conductive interface with a high electrical conductivity of 0.16 S/cm and a very small activation energy of 0.03 eV. This highly conductive interface enabled charge injection and accumulation of a high drain current in the recombination zone in ambipolar transistors, resulting in a significant reduction of the driving voltage with high, balanced hole and electron mobilities of 1.1 and 0.5 cm2V s, respectively.
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U2 - 10.1016/j.ssc.2010.10.004
DO - 10.1016/j.ssc.2010.10.004
M3 - Article
AN - SCOPUS:78649447006
SN - 0038-1098
VL - 151
SP - 93
EP - 96
JO - Solid State Communications
JF - Solid State Communications
IS - 1
ER -