Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The formation of interfacial hole carriers between a rubrene single crystal and a 2 nm-thick molybdenum oxide layer resulted in the formation of a highly conductive interface with a high electrical conductivity of 0.16 S/cm and a very small activation energy of 0.03 eV. This highly conductive interface enabled charge injection and accumulation of a high drain current in the recombination zone in ambipolar transistors, resulting in a significant reduction of the driving voltage with high, balanced hole and electron mobilities of 1.1 and 0.5 cm2V s, respectively.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalSolid State Communications
Volume151
Issue number1
DOIs
Publication statusPublished - Jan 1 2011

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors'. Together they form a unique fingerprint.

  • Cite this